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APTM120DDA57T3
Dual Boost chopper MOSFET Power Module
13 14
VDSS = 1200V RDSon = 570m max @ Tj = 25C ID = 17A @ Tc = 25C
Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Each leg can be easily paralleled to achieve a single boost of twice the current capability
CR1 22 7
CR2
23 Q1 26
8 Q2 4
27 29 15 30 31 R1 32 16
3
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ...
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
V m W A mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
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APTM120DDA57T3- Rev 0 September, 2004
Max ratings 1200 17 13 68 30 570 390 22 50 3000
Unit V A
APTM120DDA57T3
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol BVDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 250A Min 1200
VGS = 0V,VDS = 1200V VGS = 0V,VDS = 1000V T j = 25C T j = 125C
Typ
Max 100 500 570 5 100
Unit V A m V nA
VGS = 10V, ID = 8.5A VGS = VDS, ID = 2.5mA VGS = 30 V, VDS = 0V
3
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 17A Inductive switching @ 125C VGS = 15V VBus = 800V ID = 17A R G = 5 Inductive switching @ 25C VGS = 15V, VBus = 800V ID = 17A, R G = 5 Inductive switching @ 125C VGS = 15V, VBus = 800V ID = 17A, R G = 5
Min
Typ 5155 770 130 187 24 120 20 15 160 45 990 685 1565 857
Max
Unit pF
nC
ns
J
J
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRM IF(A V) VF trr Qrr
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 125C Tj = 25C Tj = 125C
Min 1200
Typ
Max 250 500
Unit V A A
Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
VR=1200V
50% duty cycle
IF = 25A VR = 600V di/dt =800A/s
0.13 2.3 6
s C
Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1.
APT website - http://www.advancedpower.com
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APTM120DDA57T3- Rev 0 September, 2004
IF = 25A VGE = 0V
25 2.3 1.8
2.8
V
APTM120DDA57T3
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 Min Typ Max 0.32 1.2 150 125 100 4.7 110 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
Temperature sensor NTC
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.16 K
Min
Typ 68 4080
Max
Unit k K
RT =
R 25 1 1 exp B25 / 85 T - T 25
T: Thermistor temperature RT : Thermistor value at T
Package outline
1
12
APT website - http://www.advancedpower.com
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APTM120DDA57T3- Rev 0 September, 2004
17
28
APTM120DDA57T3
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.3 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.9 0.7 0.5
0.1 0.05 0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 50
V GS=15, 10 & 8V
Transfert Characteristics 80 70 ID, Drain Current (A)
VDS > ID(on)xRDS (on)MAX 250s pulse test @ < 0.5 duty cycle
I D, Drain Current (A)
40 30 20 10 0 0 5 10 15 20
7V 6.5V
60 50 40 30 20 10 0 TJ=25C TJ=125C 0 1 2 3 4 5 6 TJ =-55C 7 8 9
6V
5.5V 5V
25
30
VDS , Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A)
Normalized to VGS=10V @ 8.5A
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 20 16 12 8 4 0
RDS(on) Drain to Source ON Resistance
1.4 1.3 1.2 1.1 1 0.9 0.8 0
VGS=10V VGS=20V
ID, Drain Current (A)
TC, Case Temperature (C)
APT website - http://www.advancedpower.com
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APTM120DDA57T3- Rev 0 September, 2004
10
20
30
40
25
50
75
100
125
150
APTM120DDA57T3
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 14 12 10 8 6 4 2 0 0 40 80 120 160 200 240
APTM120DDA57T3- Rev 0 September, 2004
ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS =10V ID=8.5A
100
100s limited by RDSon 1ms
10
Single pulse TJ =150C 1 1
10ms
1200 10 100 1000 VDS , Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage I D=17A TJ=25C
V DS=240V VDS=600V V DS =960V
10000
Ciss
1000
Coss
Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
Gate Charge (nC)
APT website - http://www.advancedpower.com
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APTM120DDA57T3
Delay Times vs Current 180 160 td(on) and td(off) (ns) 140 100 80 60 40 20 0 5 10 15 20 25 30 35 I D, Drain Current (A) Switching Energy vs Current 0 5 10 15 20 25 I D, Drain Current (A) 30 35
V DS=800V RG =5 T J=125C L=100H
Rise and Fall times vs Current 80
VDS=800V RG=5 TJ=125C L=100H
t d(off) 60
tf
tr and tf (ns)
120
40 tr 20
td(on)
Switching Energy vs Gate Resistance 4
VDS=800V ID=17A TJ=125C L=100H
3
Switching Energy (mJ) Switching Energy (mJ)
2.5 2 1.5 1 0.5 0 5
V DS=800V RG=5 T J=125C L=100H
Eon Eoff
Eoff
3
2 1
Eon
0
10
15
20
25
30
35
0
5
10
15
20
25
30
35
I D, Drain Current (A) Operating Frequency vs Drain Current 200 175
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage
IDR, Reverse Drain Current (A)
225
1000
Frequency (kHz)
150 125 100 75 50 25 0 4 6
VDS=800V D=50% RG=5 T J=125C T C=75C
ZCS ZVS
100 TJ=150C 10 TJ=25C
Hard switching
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
APTM120DDA57T3- Rev 0 September, 2004
8 10 12 14 ID, Drain Current (A)
16
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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